IndiumV3, Russie, Analysis, bibRecord, 000431

Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates

Identifieur interne : 000431 ( Russie/Analysis ); précédent : 000430; suivant : 000432

Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates

Auteurs : RBID : Pascal:04-0025975

Descripteurs français

Pascal (Inist)
- 7855C, 7867H, 7866F, 8105E, 7321L, 8107T, 7847, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Point quantique semiconducteur, Spectre résolution temporelle, Photoluminescence, Durée vie radiative, Etat fondamental, Etat interface.

English descriptors

KwdEn :
- Experimental study, Gallium arsenides, Ground states, III-V semiconductors, Indium compounds, Interface states, Photoluminescence, Radiative lifetimes, Semiconductor quantum dots, Time resolved spectra.

Abstract

Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate misorientation. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident power density range of 0.05-3400 Wcm^-2 at a temperature of 77 K have been obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident biexponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier recapturing process. © 2004 American Institute of Physics.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00C256
to stream Main, to step Repository: 00A885
to stream Russie, to step Extraction: 000431

Links to Exploration step

Pascal:04-0025975

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates</title>
<author><name sortKey="Karachinsky, L Ya" uniqKey="Karachinsky L">L. Ya. Karachinsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Royaume-Uni</country>
<wicri:regionArea>School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS</wicri:regionArea>
<wicri:noRegion>Edinburgh EH14 4AS</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Physics, St. Petersburg State University, 198504, St. Petersburg, Russia</s1>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Physics, St. Petersburg State University, 198504, St. Petersburg</wicri:regionArea>
<wicri:noRegion>St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Pellegrini, S" uniqKey="Pellegrini S">S. Pellegrini</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Royaume-Uni</country>
<wicri:regionArea>School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS</wicri:regionArea>
<wicri:noRegion>Edinburgh EH14 4AS</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Buller, G S" uniqKey="Buller G">G. S. Buller</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Royaume-Uni</country>
<wicri:regionArea>School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS</wicri:regionArea>
<wicri:noRegion>Edinburgh EH14 4AS</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Shkolnik, A S" uniqKey="Shkolnik A">A. S. Shkolnik</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, St. Petersburg, 194021, Russia</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>A. F. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, St. Petersburg, 194021</wicri:regionArea>
<wicri:noRegion>194021</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gordeev, N Yu" uniqKey="Gordeev N">N. Yu. Gordeev</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, St. Petersburg, 194021, Russia</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>A. F. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, St. Petersburg, 194021</wicri:regionArea>
<wicri:noRegion>194021</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Evtikhiev, V P" uniqKey="Evtikhiev V">V. P. Evtikhiev</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, St. Petersburg, 194021, Russia</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>A. F. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, St. Petersburg, 194021</wicri:regionArea>
<wicri:noRegion>194021</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Novikov, V B" uniqKey="Novikov V">V. B. Novikov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Royaume-Uni</country>
<wicri:regionArea>School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS</wicri:regionArea>
<wicri:noRegion>Edinburgh EH14 4AS</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">04-0025975</idno>
<date when="2004-01-05">2004-01-05</date>
<idno type="stanalyst">PASCAL 04-0025975 AIP</idno>
<idno type="RBID">Pascal:04-0025975</idno>
<idno type="wicri:Area/Main/Corpus">00C256</idno>
<idno type="wicri:Area/Main/Repository">00A885</idno>
<idno type="wicri:Area/Russie/Extraction">000431</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Ground states</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Interface states</term>
<term>Photoluminescence</term>
<term>Radiative lifetimes</term>
<term>Semiconductor quantum dots</term>
<term>Time resolved spectra</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7855C</term>
<term>7867H</term>
<term>7866F</term>
<term>8105E</term>
<term>7321L</term>
<term>8107T</term>
<term>7847</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Gallium arséniure</term>
<term>Semiconducteur III-V</term>
<term>Point quantique semiconducteur</term>
<term>Spectre résolution temporelle</term>
<term>Photoluminescence</term>
<term>Durée vie radiative</term>
<term>Etat fondamental</term>
<term>Etat interface</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate misorientation. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident power density range of 0.05-3400 Wcm<sup>-2</sup>
 at a temperature of 77 K have been obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident biexponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier recapturing process. © 2004 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>84</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>KARACHINSKY (L. Ya.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>PELLEGRINI (S.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BULLER (G. S.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SHKOLNIK (A. S.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>GORDEEV (N. Yu.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>EVTIKHIEV (V. P.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>NOVIKOV (V. B.)</s1>
</fA11>
<fA14 i1="01"><s1>School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>A. F. Ioffe Physico-Technical Institute, Polytechnicheskaya 26, St. Petersburg, 194021, Russia</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Institute of Physics, St. Petersburg State University, 198504, St. Petersburg, Russia</s1>
</fA14>
<fA20><s1>7-9</s1>
</fA20>
<fA21><s1>2004-01-05</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2004 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>04-0025975</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate misorientation. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident power density range of 0.05-3400 Wcm<sup>-2</sup>
 at a temperature of 77 K have been obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident biexponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier recapturing process. © 2004 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H55C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H67H</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H66F</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B70C21L</s0>
</fC02>
<fC02 i1="06" i2="3"><s0>001B80A07T</s0>
</fC02>
<fC02 i1="07" i2="3"><s0>001B70H47</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7855C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>7867H</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>7866F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>7321L</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>8107T</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>7847</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Time resolved spectra</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Durée vie radiative</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Radiative lifetimes</s0>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Etat fondamental</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Ground states</s0>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Etat interface</s0>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Interface states</s0>
</fC03>
<fN21><s1>012</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0352M000003</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000431 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000431 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:04-0025975
   |texte=   Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates

Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri